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| PartNumber | RGT40TS65DGC11 | RGT40TS65D | RGT40TS65DG |
| Description | IGBT Transistors 650V 20A IGBT Stop Trench | ||
| Manufacturer | ROHM Semiconductor | Rohm Semiconductor | - |
| Product Category | IGBT Transistors | IGBTs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.65 V | 1.65 V | - |
| Maximum Gate Emitter Voltage | 30 V | +/- 30 V | - |
| Continuous Collector Current at 25 C | 40 A | 40 A | - |
| Pd Power Dissipation | 144 W | - | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | RGT40TS65D | RGT40TS65D | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 40 A | 40 A | - |
| Operating Temperature Range | - 40 C to + 175 C | - | - |
| Brand | ROHM Semiconductor | - | - |
| Continuous Collector Current | 20 A | - | - |
| Gate Emitter Leakage Current | +/- 200 nA | +/- 200 nA | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | RGT40TS65D | - | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |
| Package Case | - | TO-247-3 | - |
| Input Type | - | Standard | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-247N | - |
| Power Max | - | 144W | - |
| Reverse Recovery Time trr | - | 58ns | - |
| Current Collector Ic Max | - | 40A | - |
| Voltage Collector Emitter Breakdown Max | - | 650V | - |
| IGBT Type | - | Trench Field Stop | - |
| Current Collector Pulsed Icm | - | 60A | - |
| Vce on Max Vge Ic | - | 2.1V @ 15V, 20A | - |
| Switching Energy | - | - | - |
| Gate Charge | - | 40nC | - |
| Td on off 25°C | - | 22ns/75ns | - |
| Test Condition | - | 400V, 20A, 10 Ohm, 15V | - |
| Pd Power Dissipation | - | 144 W | - |
| Collector Emitter Voltage VCEO Max | - | 650 V | - |