RCD100N20TL vs RCD100N20 vs RCD100N20 P0920BD

 
PartNumberRCD100N20TLRCD100N20RCD100N20 P0920BD
DescriptionMOSFET PWR MOSFET LOW RESIST DEVICE
ManufacturerROHM Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance140 mOhms--
Vgs th Gate Source Threshold Voltage3.25 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge25 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation85 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesRCD100N20--
Transistor Type1 N-Channel--
BrandROHM Semiconductor--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time35 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time25 ns--
Part # AliasesRCD100N20--
Unit Weight0.011993 oz--
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