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| PartNumber | PTAB182002FC-V1-R0 | PTAB182002FC | PTAB182002FC V1 |
| Description | RF MOSFET Transistors RF LDMOS FET | ||
| Manufacturer | Cree, Inc. | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | Dual N-Channel | - | - |
| Technology | Si | - | - |
| Vds Drain Source Breakdown Voltage | 65 V | - | - |
| Rds On Drain Source Resistance | 150 mOhms | - | - |
| Gain | 15.5 dB | - | - |
| Output Power | 190 W | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | H-37248-4 | - | - |
| Packaging | Reel | - | - |
| Operating Frequency | 1805 MHz to 1880 MHz | - | - |
| Type | RF Power MOSFET | - | - |
| Brand | Wolfspeed / Cree | - | - |
| Number of Channels | 2 Channel | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |