PD85025-E vs PD85025 vs PD85025C

 
PartNumberPD85025-EPD85025PD85025C
DescriptionRF MOSFET Transistors POWER R.F. N-Ch TransRF MOSFET Transistors RF Power Trans. LDMOST family
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryRF MOSFET Transistors-Transistors - FETs, MOSFETs - Single
RoHSY--
Transistor PolarityN-Channel-N-Channel
TechnologySi-Si
Id Continuous Drain Current7 A--
Vds Drain Source Breakdown Voltage40 V--
Gain15.7 dB-16 dB at 945 MHz
Output Power25 W-25 W
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C-+ 150 C
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerSO-10RF-Formed-4--
PackagingTube-Bulk
ConfigurationSingle--
Height3.5 mm--
Length9.4 mm--
Operating Frequency1 GHz-1 GHz
SeriesPD85025-E-PD85025
TypeRF Power MOSFET-RF Power MOSFET
Width7.5 mm--
BrandSTMicroelectronics--
Channel ModeEnhancement--
Moisture SensitiveYes--
Pd Power Dissipation79 W--
Product TypeRF MOSFET Transistors--
Factory Pack Quantity400--
SubcategoryMOSFETs--
Vgs Gate Source Voltage15 V--
Unit Weight0.105822 oz--
Package Case--M243
Pd Power Dissipation--93 W
Vgs Gate Source Voltage--+/- 20 V
Id Continuous Drain Current--7 A
Vds Drain Source Breakdown Voltage--40 V
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