P2N2222ARL1 vs P2N2222ARL1G vs P2N2222ARL

 
PartNumberP2N2222ARL1P2N2222ARL1GP2N2222ARL
DescriptionBipolar Transistors - BJT 600mA 75V NPNBipolar Transistors - BJT 600mA 75V NPN
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSNY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max40 V40 V-
Collector Base Voltage VCBO75 V75 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage1 V1 V-
Maximum DC Collector Current0.6 A0.6 A-
Gain Bandwidth Product fT300 MHz300 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Height5.33 mm5.33 mm-
Length5.2 mm5.2 mm-
PackagingReelReel-
Width4.19 mm4.19 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current600 mA600 mA-
DC Collector/Base Gain hfe Min3535-
Pd Power Dissipation1.5 W1.5 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity20002000-
SubcategoryTransistorsTransistors-
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