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| PartNumber | NVMFS5C430NLT1G | NVMFS5C430NLAFT1G | NVMFS5C430NLAFT3G |
| Description | MOSFET NFET SO8FL 40V 200A | MOSFET T6 40V NCH LL IN SO8FL | MOSFET N-CH 40V 38A 200A 5DFN |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-FL-8 | SO-FL-8 | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Series | NVMFS5C430NL | - | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1500 | 1500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.003781 oz | - | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Id Continuous Drain Current | - | 200 A | - |
| Rds On Drain Source Resistance | - | 1.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 70 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 110 W, 3.8 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 180 S | - |
| Fall Time | - | 9 ns | - |
| Rise Time | - | 140 ns | - |
| Typical Turn Off Delay Time | - | 31 ns | - |
| Typical Turn On Delay Time | - | 15 ns | - |