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| PartNumber | NVMFS5C410NLWFT1G | NVMFS5C410NLWFAFT3G | NVMFS5C410NLWFAFT1G |
| Description | MOSFET NFET SO8FL 40V 315A 900MO | MOSFET T6 40V HEFET | MOSFET T6 40V HEFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-FL-8 | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 1500 | 5000 | 1500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 40 V | 40 V |
| Id Continuous Drain Current | - | 330 A | 330 A |
| Rds On Drain Source Resistance | - | 650 uOhms | 650 uOhms |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | - | 10 V | 10 V |
| Qg Gate Charge | - | 143 nC | 143 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Pd Power Dissipation | - | 167 W, 3.8 W | 167 W, 3.8 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Forward Transconductance Min | - | 190 S | 190 S |
| Fall Time | - | 177 ns | 177 ns |
| Rise Time | - | 130 ns | 130 ns |
| Typical Turn Off Delay Time | - | 66 ns | 66 ns |
| Typical Turn On Delay Time | - | 20 ns | 20 ns |