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| PartNumber | NVMFD5C650NLT1G | NVMFD5C650NLWFT1G | NVMFD5C668NLT1G |
| Description | MOSFET T6 60V LL S08FL DS | MOSFET T6 60V LL S08FL DS | MOSFET T6 60V S08FL DUAL |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | N |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DFN-8 | DFN-8 | SO-8FL |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 111 A | 111 A | - |
| Rds On Drain Source Resistance | 3.5 mOhms, 3.5 mOhms | 3.5 mOhms, 3.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 37 nC, 37 nC | 37 nC, 37 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 125 W | 125 W | - |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Series | NVMFD5C650NL | NVMFD5C650NL | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 120 S, 120 S | 120 S, 120 S | - |
| Fall Time | 13 ns, 13 ns | 13 ns, 13 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 24 ns, 24 ns | 24 ns, 24 ns | - |
| Factory Pack Quantity | 1500 | 1500 | 1500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 37 ns, 37 ns | 37 ns, 37 ns | - |
| Typical Turn On Delay Time | 13 ns, 13 ns | 13 ns, 13 ns | - |