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| PartNumber | NTD4809N-1G | NTD4809N | NTD4809N-35G |
| Description | MOSFET NFET 30V 58A 9MOHM | IGBT Transistors MOSFET NFET 30V 58A 9MOHM | |
| Manufacturer | ON Semiconductor | ON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 11.5 A | - | - |
| Rds On Drain Source Resistance | 9 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 6.35 mm | - | - |
| Length | 6.73 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | FETs - MOSFETs | - | - |
| Width | 2.38 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 9 S | - | - |
| Fall Time | 5.3 ns, 2.8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 21.3 ns, 22.7 ns | - | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15.1 ns, 25.3 ns | - | - |
| Typical Turn On Delay Time | 12.3 ns, 7 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |