NTB60N06L vs NTB60N06G vs NTB60N06

 
PartNumberNTB60N06LNTB60N06GNTB60N06
DescriptionMOSFET 60V 60A N-ChannelMOSFET 60V 60A N-ChannelMOSFET 60V 60A N-Channel
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSNY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current60 A60 A-
Rds On Drain Source Resistance16 mOhms14 mOhms-
Vgs Gate Source Voltage15 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation150 W150 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height4.83 mm4.83 mm-
Length10.29 mm10.29 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width9.65 mm9.65 mm-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min48 S35 S-
Fall Time237 ns142.5 ns-
Product TypeMOSFETMOSFET-
Rise Time576 ns180.7 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time100 ns94.5 ns-
Typical Turn On Delay Time50.4 ns25.5 ns-
Unit Weight0.139332 oz0.139332 oz-
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