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| PartNumber | NSBC114EDXV6T1G | NSBC114EDXV6T1 | NSBC114EDXV6T1/7AX |
| Description | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | TRANS 2NPN PREBIAS 0.5W SOT563 | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Arrays, Pre-Biased | - |
| RoHS | Y | - | - |
| Configuration | Dual | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 10 kOhms | - | - |
| Typical Resistor Ratio | 1 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| DC Collector/Base Gain hfe Min | 35 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 0.1 A | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 357 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | NSBC114EDXV6 | - | - |
| Packaging | Reel | Cut Tape (CT) | - |
| DC Current Gain hFE Max | 35 | - | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Width | 1.2 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000106 oz | - | - |
| Package Case | - | SOT-563, SOT-666 | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-563 | - |
| Power Max | - | 500mW | - |
| Transistor Type | - | 2 NPN - Pre-Biased (Dual) | - |
| Current Collector Ic Max | - | 100mA | - |
| Voltage Collector Emitter Breakdown Max | - | 50V | - |
| Resistor Base R1 Ohms | - | 10k | - |
| Resistor Emitter Base R2 Ohms | - | 10k | - |
| DC Current Gain hFE Min Ic Vce | - | 35 @ 5mA, 10V | - |
| Vce Saturation Max Ib Ic | - | 250mV @ 300μA, 10mA | - |
| Current Collector Cutoff Max | - | 500nA | - |
| Frequency Transition | - | - | - |