 |  | | |
| PartNumber | NESG2101M05-A | NESG2101M05 | NESG2101M05 , EM6324QYSP |
| Description | RF Bipolar Transistors NPN SiGe High Freq | RF Bipolar Transistors NPN SiGe High Freq | |
| Manufacturer | CEL | NEC | - |
| Product Category | RF Bipolar Transistors | IC Chips | - |
| RoHS | Y | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | SiGe | - | - |
| Emitter Base Voltage VEBO | 1.5 V | - | - |
| Continuous Collector Current | 35 mA | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-343 | - | - |
| Type | RF Silicon Germanium | - | - |
| Brand | CEL | - | - |
| Pd Power Dissipation | 175 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Transistors | - | - |