NE85630-R24-A vs NE85630-A vs NE85630

 
PartNumberNE85630-R24-ANE85630-ANE85630
DescriptionRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High Frequency
ManufacturerCELCEL-
Product CategoryRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF-
RoHSY--
Transistor TypeBipolarNPN-
TechnologySiSi-
Transistor PolarityNPNNPN-
Continuous Collector Current0.1 A0.1 A-
ConfigurationSingleSingle-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323--
TypeRF Bipolar Small Signal--
BrandCEL--
Pd Power Dissipation150 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Unit Weight0.002116 oz0.002116 oz-
Series---
Packaging-Bulk Alternate Packaging-
Package Case-SC-70, SOT-323-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-323-
Power Max-150mW-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-12V-
DC Current Gain hFE Min Ic Vce-40 @ 7mA, 3V-
Frequency Transition-4.5GHz-
Noise Figure dB Typ f-1.2dB @ 1GHz-
Gain-9dB-
Pd Power Dissipation-0.150 W-
Collector Emitter Voltage VCEO Max-12 V-
Emitter Base Voltage VEBO-3 V-
DC Collector Base Gain hfe Min-40-
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