 |  | | |
| PartNumber | NE3514S02-A | NE3514S02 | NE3514S02-T10 |
| Description | RF JFET Transistors K Band Super Low Noise Amp N-Ch | ||
| Manufacturer | CEL | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Packaging | Bulk | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | S0-2 | - | - |
| Technology | GaAs | - | - |
| Transistor Type | pHEMT | - | - |
| Gain | 10 dB | - | - |
| Pd Power Dissipation | 165 mW | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Operating Frequency | 20 GHz | - | - |
| Id Continuous Drain Current | 70 mA | - | - |
| Vds Drain Source Breakdown Voltage | 4 V | - | - |
| Forward Transconductance Min | 55 mS | - | - |
| Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
| Gate Source Cutoff Voltage | - 0.7 V | - | - |
| NF Noise Figure | 0.75 dB | - | - |