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| PartNumber | NDD02N40T4G | NDD02N40-1G | NDD02N40 |
| Description | MOSFET NFET DPAK 400V 1.7A 5.5OH | MOSFET NFET DPAK 400V 1.7A 5.5OH | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | Through Hole |
| Package / Case | TO-252-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 400 V | 400 V | - |
| Id Continuous Drain Current | 400 mA | 1.7 A | - |
| Rds On Drain Source Resistance | 5.5 Ohms | 4.5 Ohms | - |
| Configuration | Single | Single | Single |
| Packaging | Reel | Tube | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 75 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 1.6 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 5.5 nC | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 39 W | - |
| Forward Transconductance Min | - | 1.1 S | - |
| Fall Time | - | 4 ns | 4 ns |
| Rise Time | - | 7 ns | 7 ns |
| Typical Turn Off Delay Time | - | 14 ns | 14 ns |
| Typical Turn On Delay Time | - | 5 ns | 5 ns |
| Package Case | - | - | IPAK-3 |
| Pd Power Dissipation | - | - | 39 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 1.7 A |
| Vds Drain Source Breakdown Voltage | - | - | 400 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.6 V |
| Rds On Drain Source Resistance | - | - | 4.5 Ohms |
| Qg Gate Charge | - | - | 5.5 nC |
| Forward Transconductance Min | - | - | 1.1 S |