MUN5311DW1T1 vs MUN5311DW1T vs MUN5311DW1T1 PUMD3

 
PartNumberMUN5311DW1T1MUN5311DW1TMUN5311DW1T1 PUMD3
DescriptionBipolar Transistors - Pre-Biased 100mA Complementary
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSN--
ConfigurationDual--
Transistor PolarityNPN, PNP--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSC-88-6--
DC Collector/Base Gain hfe Min35--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation187 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReelCut Tape (CT)-
DC Current Gain hFE Max35 at 5 mA at 10 V--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandON Semiconductor--
Number of Channels2 Channel--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Series---
Package Case-6-TSSOP, SC-88, SOT-363-
Mounting Type-Surface Mount-
Supplier Device Package-SC-88/SC70-6/SOT-363-
Power Max-250mW-
Transistor Type-1 NPN, 1 PNP - Pre-Biased (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
Resistor Base R1 Ohms-10k-
Resistor Emitter Base R2 Ohms-10k-
DC Current Gain hFE Min Ic Vce-35 @ 5mA, 10V-
Vce Saturation Max Ib Ic-250mV @ 300μA, 10mA-
Current Collector Cutoff Max-500nA-
Frequency Transition---
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