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| PartNumber | MT3S111(TE85L,F) | MT3S111(TE85LF)CT-ND | MT3S111(TE85LF)DKR-ND |
| Description | RF Bipolar Transistors RF Bipolar Transistor .1A 700mW | ||
| Manufacturer | Toshiba | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | Y | - | - |
| Series | MT3S111 | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | SiGe | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Collector Emitter Voltage VCEO Max | 6 V | - | - |
| Emitter Base Voltage VEBO | 0.6 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-236-3 | - | - |
| Packaging | Reel | - | - |
| Operating Frequency | 11.5 GHz | - | - |
| Brand | Toshiba | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 700 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000423 oz | - | - |