MSA1162YT1 vs MSA1162YT1G vs MSA1162YT1(62Y)

 
PartNumberMSA1162YT1MSA1162YT1GMSA1162YT1(62Y)
DescriptionBipolar Transistors - BJT 100mA 60V PNPBipolar Transistors - BJT 100mA 60V PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSNY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSC-59-3SC-59-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max50 V50 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO7 V7 V-
Collector Emitter Saturation Voltage0.5 V0.5 V-
Maximum DC Collector Current0.1 A0.1 A-
Gain Bandwidth Product fT80 MHz80 MHz-
Maximum Operating Temperature+ 150 C+ 150 C-
Height1.09 mm1.09 mm-
Length2.9 mm2.9 mm-
PackagingReelReel-
Width1.5 mm1.5 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current0.1 uA0.1 uA-
DC Collector/Base Gain hfe Min120120-
Pd Power Dissipation200 mW200 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000282 oz0.000282 oz-
Minimum Operating Temperature-- 55 C-
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