MRF9210R3 vs MRF9210R5 vs MRF9210R


PartNumber	MRF9210R3	MRF9210R5	MRF9210R
Description	RF MOSFET Transistors 200W RF LDMOS NI860ML	RF MOSFET Transistors 200W RF LDMOS NI860ML
Manufacturer	NXP	NXP	-
Product Category	RF MOSFET Transistors	RF MOSFET Transistors	-
RoHS	Y	N	-
Transistor Polarity	N-Channel	N-Channel	-
Technology	Si	Si	-
Vds Drain Source Breakdown Voltage	65 V	65 V	-
Gain	16.5 dB	16.5 dB	-
Output Power	40 W	40 W	-
Minimum Operating Temperature	- 65 C	- 65 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	NI-860C3-5	NI-860C3-5	-
Packaging	Reel	Reel	-
Configuration	Single	Single	-
Height	5.69 mm	5.69 mm	-
Length	34.16 mm	34.16 mm	-
Operating Frequency	865 MHz to 895 MHz	865 MHz to 895 MHz	-
Type	RF Power MOSFET	RF Power MOSFET	-
Width	10.31 mm	10.31 mm	-
Brand	NXP / Freescale	NXP / Freescale	-
Channel Mode	Enhancement	Enhancement	-
Pd Power Dissipation	565 W	565 W	-
Product Type	RF MOSFET Transistors	RF MOSFET Transistors	-
Factory Pack Quantity	250	50	-
Subcategory	MOSFETs	MOSFETs	-
Vgs Gate Source Voltage	- 0.5 V, 15 V	- 0.5 V, 15 V	-
Vgs th Gate Source Threshold Voltage	2.8 V	2.8 V	-
Unit Weight	0.223087 oz	0.223087 oz	-