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| PartNumber | MRF6S19100HR3 | MRF6S19100H | MRF6S19100HR1 |
| Description | RF MOSFET Transistors HV6 WCDMA 22W NI780H | ||
| Manufacturer | NXP | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Vds Drain Source Breakdown Voltage | 68 V | - | - |
| Gain | 16.1 dB | - | - |
| Output Power | 22 W | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | NI-780-3 | - | - |
| Packaging | Reel | - | - |
| Configuration | Single | - | - |
| Height | 4.32 mm | - | - |
| Length | 34.16 mm | - | - |
| Operating Frequency | 1.93 GHz to 1.99 GHz | - | - |
| Series | MRF6S19100H | - | - |
| Type | RF Power MOSFET | - | - |
| Width | 9.91 mm | - | - |
| Brand | NXP / Freescale | - | - |
| Channel Mode | Enhancement | - | - |
| Pd Power Dissipation | 398 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 250 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | - 0.5 V, 12 V | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Unit Weight | 0.226635 oz | - | - |