MJD50T4G vs MJD50T4 vs MJD50T4-TR

 
PartNumberMJD50T4GMJD50T4MJD50T4-TR
DescriptionBipolar Transistors - BJT 1A 400V 15W NPNBipolar Transistors - BJT 1A 400V 15W NPN
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max400 V400 V-
Collector Base Voltage VCBO500 V500 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage1 V1 V-
Maximum DC Collector Current1 A1 A-
Gain Bandwidth Product fT10 MHz10 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJD50--
Height2.38 mm2.38 mm-
Length6.73 mm6.73 mm-
PackagingReelReel-
Width6.22 mm6.22 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current1 A1 A-
DC Collector/Base Gain hfe Min3030-
Pd Power Dissipation15 W15 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity25002500-
SubcategoryTransistorsTransistors-
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