MJB44H11G vs MJB44H11 vs MJB44H11T

 
PartNumberMJB44H11GMJB44H11MJB44H11T
DescriptionBipolar Transistors - BJT 8A 80V 50W NPNBipolar Transistors - BJT 8A 80V 50W NPN
ManufacturerON SemiconductorON SemiconductorON
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max80 V80 V-
Collector Base Voltage VCBO5 V5 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage1 V1 V-
Maximum DC Collector Current10 A10 A-
Gain Bandwidth Product fT50 MHz50 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJB44H11--
Height4.83 mm4.83 mm (Max)-
Length10.29 mm10.29 mm (Max)-
PackagingTubeTube-
Width9.65 mm9.65 mm (Max)-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current10 A10 A-
DC Collector/Base Gain hfe Min6060-
Pd Power Dissipation50 W50 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity5050-
SubcategoryTransistorsTransistors-
Unit Weight0.080777 oz--
Top