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| PartNumber | MAGX-002731-100L00 | MAGX-002731-180L00 | MAGX-002731-030L00 |
| Description | RF JFET Transistors 2.7-3.1GHz 50Volt 100W Pk Gain 12dB | RF JFET Transistors 2.7-3.1GHz 50Volt 180W Pk Gain 11.6dB | TRANSISTOR GAN 30WPK 2.7-3.1GHZ |
| Manufacturer | MACOM | MACOM | - |
| Product Category | RF JFET Transistors | RF JFET Transistors | - |
| RoHS | Y | Y | - |
| Transistor Type | HEMT | HEMT | - |
| Technology | GaN SiC | GaN SiC | - |
| Gain | 12.6 dB | 11.5 dB | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 175 V | 175 V | - |
| Vgs Gate Source Breakdown Voltage | - 8 V | - 8 V | - |
| Id Continuous Drain Current | 7.1 A | 10 A | - |
| Output Power | 100 W | 180 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 95 C | + 95 C | - |
| Pd Power Dissipation | 128 W | 192 W | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Packaging | Tray | Tray | - |
| Configuration | Common Source | Common Source | - |
| Operating Frequency | 2.7 GHz to 3.1 GHz | 2.7 GHz to 3.1 GHz | - |
| Operating Temperature Range | - 40 C to + 95 C | - 40 C to + 95 C | - |
| Product | RF JFET | RF JFET | - |
| Type | GaN SiC HEMT | GaN SiC HEMT | - |
| Brand | MACOM | MACOM | - |
| Forward Transconductance Min | 2.5 S | 5 S | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Factory Pack Quantity | 25 | 25 | - |
| Subcategory | Transistors | Transistors | - |
| Vgs th Gate Source Threshold Voltage | - 3 V | - 3 V | - |