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| PartNumber | MAGX-000035-010000 | MAGX-000035-01000P | MAGX-000025-150000 |
| Description | RF JFET Transistors .03-3.5GHz 10W CW Pin 25 dBm GaN | RF JFET Transistors DC-3.5GHz Gain 14dB GaN SiC | RF JFET Transistors 1-2500MHz Flanged GaN SiC |
| Manufacturer | MACOM | MACOM | MACOM |
| Product Category | RF JFET Transistors | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Transistor Type | HEMT | HEMT | HEMT |
| Technology | GaN SiC | GaN SiC | GaN SiC |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Output Power | 10 W | 10 W | 170 W |
| Packaging | Tray | Tray | Tray |
| Product | RF JFET | - | - |
| Type | GaN SiC HEMT | - | - |
| Brand | MACOM | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | Transistors | - | - |
| Series | - | MAGX | - |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Operating Temperature Range | - | - 40 C to + 95 C | - 40 C to + 95 C |
| Configuration | - | Single | Common Source |
| Gain | - | 14 dB | 18 dB |
| Pd Power Dissipation | - | 12 W | 79 W |
| Maximum Operating Temperature | - | + 95 C | + 95 C |
| Minimum Operating Temperature | - | - 40 C | - 40 C |
| Operating Frequency | - | 3.5 GHz | 1 MHz to 2.5 GHz |
| Id Continuous Drain Current | - | 500 mA | 8.3 A |
| Vds Drain Source Breakdown Voltage | - | 65 V | 50 V |
| Forward Transconductance Min | - | 0.2 S | 2 S |
| Package Case | - | - | Flange Ceramic-4 |
| Vgs th Gate Source Threshold Voltage | - | - | - 3.1 V |
| Vgs Gate Source Breakdown Voltage | - | - | - 8 V |