KSE181STU vs KSE180 vs KSE180S

 
PartNumberKSE181STUKSE180KSE180S
DescriptionBipolar Transistors - BJT NPN Epitaxial SilTRANS NPN 40V 3A TO-126
ManufacturerON SemiconductorFSC-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-126-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO7 V--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT50 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max250--
Height11 mm--
Length8 mm--
PackagingTube--
Width3.25 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current3 A--
DC Collector/Base Gain hfe Min50--
Pd Power Dissipation1.5 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity60--
SubcategoryTransistors--
Unit Weight0.026843 oz--
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