IXTT74N20P vs IXTT75N10 vs IXTT72N20

 
PartNumberIXTT74N20PIXTT75N10IXTT72N20
DescriptionMOSFET 74 Amps 200V 0.034 RdsMOSFET 75 Amps 100V 0.02 RdsMOSFET 72 Amps 200 V 0.033 W Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-268-3TO-268-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage200 V100 V-
Id Continuous Drain Current74 A75 A-
Rds On Drain Source Resistance34 mOhms20 mOhms-
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge107 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
Pd Power Dissipation480 W300 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenamePolarHT--
PackagingTubeTubeTube
Height5.1 mm--
Length14 mm--
SeriesIXTT74N20IXTT75N10IXTT72N20
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolarHT Power MOSFET--
Width16.05 mm--
BrandIXYSIXYS-
Forward Transconductance Min30 S--
Fall Time21 ns30 ns20 ns
Product TypeMOSFETMOSFET-
Rise Time21 ns60 ns30 ns
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time60 ns100 ns80 ns
Typical Turn On Delay Time23 ns40 ns24 ns
Unit Weight0.158733 oz0.158733 oz0.158733 oz
Package Case--TO-268-2
Pd Power Dissipation--400 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--72 A
Vds Drain Source Breakdown Voltage--200 V
Rds On Drain Source Resistance--33 mOhms
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