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| PartNumber | IXTN600N04T2 | IXTN60N50L2 | IXTN61N50 |
| Description | Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET 60 Amps 500V | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | MOSFET | - |
| RoHS | Y | Y | - |
| Type | TrenchT2 GigaMOS | Linear Power MOSFET | - |
| Mounting Style | SMD/SMT | Chassis Mount | - |
| Package / Case | SOT-227B | SOT-227-4 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 150 C | - |
| Series | IXTN600N04 | IXTN60N50 | - |
| Packaging | Tube | Tube | - |
| Output Current | 600 A | - | - |
| Brand | IXYS | IXYS | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Fall Time | 250 ns | 38 ns | - |
| Pd Power Dissipation | 940 W | 735 W | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Rise Time | 20 ns | 40 ns | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Tradename | HiPerFET | Linear L2 | - |
| Unit Weight | 1.058219 oz | 1.058219 oz | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Vds Drain Source Breakdown Voltage | - | 500 V | - |
| Id Continuous Drain Current | - | 53 A | - |
| Rds On Drain Source Resistance | - | 100 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 610 nC | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 12.22 mm | - |
| Length | - | 38.23 mm | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 25.42 mm | - |
| Forward Transconductance Min | - | 18 S | - |
| Typical Turn Off Delay Time | - | 165 ns | - |
| Typical Turn On Delay Time | - | 40 ns | - |