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| PartNumber | IXGT10N170 | IXGT10N170A | IXGT12N120A2D1 |
| Description | IGBT Transistors 20 Amps 1700 V 4 V Rds | IGBT Transistors 20 Amps 1700 V 7 V Rds | IGBT 1200V TO268 |
| Manufacturer | IXYS | IXYS | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-268-3 | TO-268-3 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 1.7 kV | 1.7 kV | - |
| Collector Emitter Saturation Voltage | 2.7 V | 4.5 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 20 A | 10 A | - |
| Pd Power Dissipation | 110 W | 140 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | IXGT10N170 | IXGT10N170 | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 70 A | 20 A | - |
| Height | 5.1 mm | 5.1 mm | - |
| Length | 16.05 mm | 16.05 mm | - |
| Operating Temperature Range | - 55 C to + 150 C | - 55 C to + 150 C | - |
| Width | 14 mm | 14 mm | - |
| Brand | IXYS | IXYS | - |
| Continuous Collector Current | 20 A | 10 A | - |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 0.158733 oz | 0.158733 oz | - |