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| PartNumber | IXFQ10N80P | IXFQ120N25X3 | IXFQ12N80P |
| Description | MOSFET | MOSFET DISCMSFT NCHULTRJNCTN X3CLASS | MOSFET 12 Amps 800V 0.85 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-3P-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Configuration | Single | - | Single |
| Tradename | HiPerFET | HiPerFET | HyperFET |
| Packaging | Tube | Tube | Tube |
| Series | IXFQ10N80 | - | IXFQ12N80 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 30 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.194007 oz | - | 0.194007 oz |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 360 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 25 ns |
| Rise Time | - | - | 26 ns |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 12 A |
| Vds Drain Source Breakdown Voltage | - | - | 800 V |
| Rds On Drain Source Resistance | - | - | 850 mOhms |
| Typical Turn Off Delay Time | - | - | 70 ns |
| Typical Turn On Delay Time | - | - | 23 ns |
| Channel Mode | - | - | Enhancement |