IXFK40N90P vs IXFK400N15X3 vs IXFK420N10

 
PartNumberIXFK40N90PIXFK400N15X3IXFK420N10
DescriptionMOSFET PolarHV HiPerFETs 500V-1.2Kv Red RdsMOSFET DISCMSFT NCHULTRJNCTN X3CLASS
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-264-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage900 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance210 mOhms--
Vgs th Gate Source Threshold Voltage6.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge230 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 175 C
Pd Power Dissipation960 W--
ConfigurationSingle--
TradenameHiPerFETHiPerFETGigaMOS HiperFET
PackagingTubeTubeTube
SeriesIXFK40N90-IXFK420N10
Transistor Type1 N-Channel--
BrandIXYSIXYS-
Forward Transconductance Min30 S--
Fall Time46 ns-255 ns
Product TypeMOSFETMOSFET-
Rise Time50 ns-155 ns
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time77 ns-115 ns
Typical Turn On Delay Time53 ns-47 ns
Unit Weight0.352740 oz-0.264555 oz
Package Case--TO-264-3
Pd Power Dissipation--1.67 kW
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--420 A
Vds Drain Source Breakdown Voltage--100 V
Vgs th Gate Source Threshold Voltage--5 V
Rds On Drain Source Resistance--2.6 mOhms
Qg Gate Charge--670 nC
Forward Transconductance Min--110 S
Channel Mode--Enhancement
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