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| PartNumber | IXFE34N100 | IXFE39N90 | IXFE36N100 |
| Description | MOSFET N-CH 1000V 30A ISOPLUS227 | MOSFET 34 Amps 900V 0.22 Rds | MOSFET 33 Amps 1000V 0.24 Rds |
| Manufacturer | - | IXYS | IXYS |
| Product Category | - | Module | Module |
| Series | - | IXFE39N90 | IXFE36N100 |
| Packaging | - | Tube | Tube |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Tradename | - | HyperFET | - |
| Package Case | - | ISOPLUS-227-4 | ISOPLUS-227-4 |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Configuration | - | Single Dual Source | Single Dual Source |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | - | 580 W | 580 W |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Minimum Operating Temperature | - | - 40 C | - 55 C |
| Fall Time | - | 30 ns | 40 ns |
| Rise Time | - | 68 ns | 82 ns |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 34 A | 33 A |
| Vds Drain Source Breakdown Voltage | - | 900 V | 1000 V |
| Rds On Drain Source Resistance | - | 220 mOhms | 240 mOhms |
| Transistor Polarity | - | N-Channel | N-Channel |
| Typical Turn Off Delay Time | - | 125 ns | 150 ns |
| Typical Turn On Delay Time | - | 45 ns | 81 ns |
| Channel Mode | - | Enhancement | Enhancement |