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| PartNumber | IS61WV51216EEALL-20BLI | IS61WV51216EEALL-20BLI-TR | IS61WV51216EEALL-20TLI |
| Description | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS |
| Manufacturer | ISSI | ISSI | ISSI |
| Product Category | SRAM | SRAM | SRAM |
| RoHS | Y | Y | Y |
| Memory Size | 8 Mbit | 8 Mbit | 8 Mbit |
| Organization | 512 k x 16 | 512 k x 16 | 512 k x 16 |
| Access Time | 20 ns | 20 ns | 20 ns |
| Interface Type | Parallel | Parallel | Parallel |
| Supply Voltage Max | 2.2 V | 2.2 V | 2.2 V |
| Supply Voltage Min | 1.65 V | 1.65 V | 1.65 V |
| Supply Current Max | 90 mA | 90 mA | 90 mA |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | BGA-48 | BGA-48 | TSOP-44 |
| Series | IS61WV51216EEALL | IS61WV51216EEALL | IS61WV51216EEALL |
| Type | Asynchronous | Asynchronous | Asynchronous |
| Brand | ISSI | ISSI | ISSI |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 480 | 2500 | 135 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Packaging | - | Reel | - |