IRLR3105TRLPBF vs IRLR3105 vs IRLR3105PBF

 
PartNumberIRLR3105TRLPBFIRLR3105IRLR3105PBF
DescriptionMOSFET MOSFT 55V 25A 37mOhm 13.3nC LogLvlMOSFET N-CH 55V 25A DPAK
ManufacturerInfineonIRIR
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current25 A--
Rds On Drain Source Resistance37 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Qg Gate Charge20 nC--
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation57 W--
ConfigurationSingle-Single
PackagingReel-Tube
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandInfineon / IR--
Forward Transconductance Min15 S--
Fall Time37 ns-37 ns
Product TypeMOSFET--
Rise Time57 ns-57 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSP001552778--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--57 W
Minimum Operating Temperature--- 55 C
Vgs Gate Source Voltage--16 V
Id Continuous Drain Current--25 A
Vds Drain Source Breakdown Voltage--55 V
Vgs th Gate Source Threshold Voltage--1 V to 3 V
Rds On Drain Source Resistance--43 mOhms
Typical Turn Off Delay Time--25 ns
Typical Turn On Delay Time--8 ns
Qg Gate Charge--13.3 nC
Forward Transconductance Min--15 S
Channel Mode--Enhancement
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