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| PartNumber | IRLL024N | IRLL024NHR | IRLL024NPBF |
| Description | MOSFET Transistor, N-Channel, SOT-223 | MOSFET N-CH 55V 3.1A SOT223 | |
| Manufacturer | IR | - | IR |
| Product Category | FETs - Single | - | FETs - Single |
| Packaging | Tube | - | Tube |
| Unit Weight | 0.006632 oz | - | 0.006632 oz |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package Case | SOT-223-4 | - | SOT-223-4 |
| Technology | Si | - | Si |
| Number of Channels | 1 Channel | - | 1 Channel |
| Configuration | Single Dual Drain | - | Single Dual Drain |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Pd Power Dissipation | 2.1 W | - | 2.1 W |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Fall Time | 25 ns | - | 25 ns |
| Rise Time | 21 ns | - | 21 ns |
| Vgs Gate Source Voltage | 16 V | - | 16 V |
| Id Continuous Drain Current | 4.4 A | - | 4.4 A |
| Vds Drain Source Breakdown Voltage | 55 V | - | 55 V |
| Rds On Drain Source Resistance | 100 mOhms | - | 100 mOhms |
| Transistor Polarity | N-Channel | - | N-Channel |
| Typical Turn Off Delay Time | 18 ns | - | 18 ns |
| Typical Turn On Delay Time | 7.4 ns | - | 7.4 ns |
| Qg Gate Charge | 10.4 nC | - | 10.4 nC |
| Channel Mode | Enhancement | - | Enhancement |