IRGB4056DPBF vs IRGB4056D vs IRGB4059D

 
PartNumberIRGB4056DPBFIRGB4056DIRGB4059D
DescriptionIGBT Transistors 600V UltraFast Trench IGBT
ManufacturerInfineonIRInfineon Technologies
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-220AB-3--
Mounting StyleThrough Hole-Through Hole
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.55 V-2.05 V
Maximum Gate Emitter Voltage20 V-+/- 20 V
Continuous Collector Current at 25 C24 A-8 A
Pd Power Dissipation140 W--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
PackagingTube-Tube
Continuous Collector Current Ic Max24 A-8 A
Height16.51 mm--
Length10.67 mm--
Width4.83 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Part # AliasesSP001544890--
Unit Weight0.211644 oz-0.211644 oz
Series---
Package Case--TO-220-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-220AB
Power Max--56W
Reverse Recovery Time trr--55ns
Current Collector Ic Max--8A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type--Trench
Current Collector Pulsed Icm--16A
Vce on Max Vge Ic--2.05V @ 15V, 4A
Switching Energy--35μJ (on), 75μJ (off)
Gate Charge--9nC
Td on off 25°C--25ns/65ns
Test Condition--400V, 4A, 100 Ohm, 15V
Pd Power Dissipation--56 W
Collector Emitter Voltage VCEO Max--600 V
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