IRG7PH42UD-EP vs IRG7PH42UD vs IRG7PH42UD-EP,G7PH42UD-E

 
PartNumberIRG7PH42UD-EPIRG7PH42UDIRG7PH42UD-EP,G7PH42UD-E
DescriptionIGBT Transistors 1200V Trench IGBT Generic Ind App
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2 V2 V-
Maximum Gate Emitter Voltage30 V--
Continuous Collector Current at 25 C85 A85 A-
Pd Power Dissipation320 W--
Minimum Operating Temperature- 55 C--
PackagingTubeTube-
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesSP001533730--
Unit Weight1.340411 oz1.340411 oz-
Series---
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-TO-247AD-
Power Max-313W-
Reverse Recovery Time trr---
Current Collector Ic Max-85A-
Voltage Collector Emitter Breakdown Max-1200V-
IGBT Type-Trench-
Current Collector Pulsed Icm-200A-
Vce on Max Vge Ic-2V @ 15V, 30A-
Switching Energy-1.21mJ (off)-
Gate Charge-180nC-
Td on off 25°C--/270ns-
Test Condition-600V, 30A, 10 Ohm, 15V-
Pd Power Dissipation-313 W-
Collector Emitter Voltage VCEO Max-1.2 kV-
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