IRFPE50PBF vs IRFPE50 vs IRFPE50PBF,IRFPE50,FPE50

 
PartNumberIRFPE50PBFIRFPE50IRFPE50PBF,IRFPE50,FPE50
DescriptionMOSFET N-CH 800V HEXFET MOSFETMOSFET RECOMMENDED ALT 844-IRFPE50PBF
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSEN-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247AC-3TO-247-3-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current7.8 A--
Rds On Drain Source Resistance1.2 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge200 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation190 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTubeTube-
Height20.82 mm20.82 mm-
Length15.87 mm15.87 mm-
SeriesIRFPEIRFPE-
Transistor Type1 N-Channel--
Width5.31 mm5.31 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min5.6 S--
Fall Time39 ns--
Product TypeMOSFETMOSFET-
Rise Time38 ns--
Factory Pack Quantity500500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time120 ns--
Typical Turn On Delay Time19 ns--
Unit Weight1.340411 oz1.340411 oz-
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