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| PartNumber | IRF9910 | IRF9910PBF | IRF9910PBF-1 |
| Description | MOSFET 2N-CH 20V 10A 8-SOIC | MOSFET 2N-CH 20V 10A/12A 8-SOIC | |
| Manufacturer | Infineon Technologies | International Rectifier | - |
| Product Category | FETs - Arrays | Transistors - FETs, MOSFETs - Single | - |
| Series | HEXFETR | - | - |
| Packaging | Tube | Tube | - |
| Package Case | 8-SOIC (0.154", 3.90mm Width) | SOIC-8 | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
| Mounting Type | Surface Mount | - | - |
| Supplier Device Package | 8-SO | - | - |
| FET Type | 2 N-Channel (Dual) | - | - |
| Power Max | 2W | - | - |
| Drain to Source Voltage Vdss | 20V | - | - |
| Input Capacitance Ciss Vds | 900pF @ 10V | - | - |
| FET Feature | Logic Level Gate | - | - |
| Current Continuous Drain Id 25°C | 10A, 12A | - | - |
| Rds On Max Id Vgs | 13.4 mOhm @ 10A, 10V | - | - |
| Vgs th Max Id | 2.55V @ 250μA | - | - |
| Gate Charge Qg Vgs | 11nC @ 4.5V | - | - |
| Unit Weight | - | 0.019048 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Technology | - | Si | - |
| Number of Channels | - | 2 Channel | - |
| Configuration | - | Dual | - |
| Transistor Type | - | 2 N-Channel | - |
| Pd Power Dissipation | - | 2 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 4.5 ns 7.5 ns | - |
| Rise Time | - | 10 ns 14 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 10 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 18.3 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 9.2 ns 15 ns | - |
| Typical Turn On Delay Time | - | 6.3 ns 8.3 ns | - |
| Channel Mode | - | Enhancement | - |