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| PartNumber | IRF7811AV/IRF7811A | IRF7811AV | IRF7811AVPBF |
| Description | MOSFET Transistor, N-Channel, SO | MOSFET N-CH 30V 10.8A 8-SOIC | |
| Manufacturer | IR | IR | IRF |
| Product Category | IC Chips | FETs - Single | FETs - Single |
| Packaging | - | - | Tube |
| Unit Weight | - | - | 0.019048 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SOIC-8 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single Quad Drain Triple Source |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 3.5 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 10 ns |
| Rise Time | - | - | 21 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 14 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 14 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 43 ns |
| Typical Turn On Delay Time | - | - | 8.6 ns |
| Qg Gate Charge | - | - | 17 nC |
| Channel Mode | - | - | Enhancement |