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| PartNumber | IRF630NS | IRF630NSTRL | IRF630NSPBF |
| Description | MOSFET N-CH 200V 9.3A D2PAK | MOSFET, N-CH, 200V, 9.3A, TO-263 | Darlington Transistors MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC |
| Manufacturer | IR | IR | IR |
| Product Category | FETs - Single | FETs - Single | FETs - Single |
| Packaging | Tube | - | Tube |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package Case | TO-252-3 | - | TO-252-3 |
| Technology | Si | - | Si |
| Number of Channels | 1 Channel | - | 1 Channel |
| Configuration | Single | - | Single |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Pd Power Dissipation | 82 W | - | 82 W |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Fall Time | 15 ns | - | 15 ns |
| Rise Time | 14 ns | - | 14 ns |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Id Continuous Drain Current | 9.5 A | - | 9.5 A |
| Vds Drain Source Breakdown Voltage | 200 V | - | 200 V |
| Rds On Drain Source Resistance | 300 mOhms | - | 300 mOhms |
| Transistor Polarity | N-Channel | - | N-Channel |
| Typical Turn Off Delay Time | 27 ns | - | 27 ns |
| Typical Turn On Delay Time | 7.9 ns | - | 7.9 ns |
| Qg Gate Charge | 23.3 nC | - | 23.3 nC |
| Channel Mode | Enhancement | - | Enhancement |