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| PartNumber | IRF3717PBF | IRF3717 | IRF3717PBF-1 |
| Description | MOSFET 20V 1 N-CH HEXFET 4.4mOhms 22nC | MOSFET N-CH 20V 20A 8-SOIC | |
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 5.7 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 22 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 14 ns | - | - |
| Factory Pack Quantity | 3800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | SP001564392 | - | - |
| Unit Weight | 0.019048 oz | - | - |