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| PartNumber | IPU60R2K1CEAKMA1 | IPU60R2K1CE | IPU60R2K1CE HF |
| Description | MOSFET | Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-251-3 | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Tube | Tube | - |
| Height | 6.22 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | CoolMOS CE | - | - |
| Width | 2.38 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | IPU60R2K1CE SP001493880 | - | - |
| Unit Weight | 0.011993 oz | 0.012102 oz | - |
| Part Aliases | - | IPU60R2K1CE SP001276064 | - |
| Package Case | - | TO-251-3 | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 22 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Fall Time | - | 50 ns | - |
| Rise Time | - | 7 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 2.3 A | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Rds On Drain Source Resistance | - | 2.1 Ohms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 30 ns | - |
| Typical Turn On Delay Time | - | 7 ns | - |
| Qg Gate Charge | - | 6.7 nC | - |
| Channel Mode | - | Enhancement | - |