IPU135N03L G vs IPU135N03L vs IPU135N08N3

 
PartNumberIPU135N03L GIPU135N03LIPU135N08N3
DescriptionMOSFET N-Ch 30V 30A IPAK-3
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-251-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance20.5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation31 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingTube-Tube
Height6.22 mm--
Length6.73 mm--
Transistor Type1 N-Channel-1 N-Channel
Width2.38 mm--
BrandInfineon Technologies--
Forward Transconductance Min43 S--
Fall Time2 ns-5 ns
Product TypeMOSFET--
Rise Time3 ns-35 ns
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12 ns-18 ns
Typical Turn On Delay Time3 ns-12 ns
Part # AliasesIPU135N03LGXK--
Unit Weight0.139332 oz-0.139332 oz
Series--IPU135N08
Part Aliases--IPU135N08N3GBKMA1 SP000521642
Tradename--OptiMOS
Package Case--IPAK-3
Pd Power Dissipation--79 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--50 A
Vds Drain Source Breakdown Voltage--80 V
Rds On Drain Source Resistance--13.5 mOhms
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