 | | | |
| PartNumber | IPP80N04S304 | IPP80N04S3-04/3N0404 | IPP80N04S3-03 |
| Description | IGBT Transistors MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T | ||
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | OptiMOS-T |
| Packaging | - | - | Tube |
| Part Aliases | - | - | IPP80N04S303AKSA1 IPP80N04S303XK SP000261229 |
| Unit Weight | - | - | 0.211644 oz |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TO-220-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 188 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 14 ns |
| Rise Time | - | - | 17 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 80 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Rds On Drain Source Resistance | - | - | 3.5 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 39 ns |
| Typical Turn On Delay Time | - | - | 25 ns |
| Channel Mode | - | - | Enhancement |