IPP139N08N3 G vs IPP139N08N3GXKSA1 vs IPP139N08N3GHKSA1

 
PartNumberIPP139N08N3 GIPP139N08N3GXKSA1IPP139N08N3GHKSA1
DescriptionMOSFET N-Ch 80V 45A TO220-3 OptiMOS 3- Bulk (Alt: IPP139N08N3GXKSA1)MOSFET N-Ch 80V 45A TO220-3
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current45 A--
Rds On Drain Source Resistance13.6 mOhms--
Vgs th Gate Source Threshold Voltage2.8 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge19 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation79 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS-OptiMOS
PackagingTube-Tube
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel-1 N-Channel
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min48 S, 24 S--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time35 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18 ns--
Typical Turn On Delay Time12 ns--
Part # AliasesIPP139N08N3GXKSA1 SP000680870--
Unit Weight0.211644 oz-0.211644 oz
Part Aliases--SP000439710
Package Case--TO-220-3
Id Continuous Drain Current--45 A
Vds Drain Source Breakdown Voltage--80 V
Rds On Drain Source Resistance--13.6 mOhms
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