PartNumber | IPD60R800CEAUMA1 | IPD60R800CEATMA1 | IPD60R800CE |
Description | MOSFET CONSUMER | MOSFET N-CH 600V TO-252-3 | 600V,800m��,8.4A,N-Channel Power MOSFET |
Manufacturer | Infineon | Infineon Technologies | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | - | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Series | CoolMOS CE | - | - |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | IPD60R800CE SP001396890 | - | - |
Unit Weight | 0.011993 oz | 0.139332 oz | - |
Part Aliases | - | IPD60R800CE SP001276028 | - |
Package Case | - | TO-252-3 | - |
Number of Channels | - | 1 Channel | - |
Configuration | - | Single | - |
Transistor Type | - | 1 N-Channel | - |
Pd Power Dissipation | - | 48 W | - |
Maximum Operating Temperature | - | + 150 C | - |
Minimum Operating Temperature | - | - 40 C | - |
Fall Time | - | 12 ns | - |
Rise Time | - | 7 ns | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 5.6 A | - |
Vds Drain Source Breakdown Voltage | - | 600 V | - |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
Rds On Drain Source Resistance | - | 800 mOhms | - |
Transistor Polarity | - | N-Channel | - |
Typical Turn Off Delay Time | - | 50 ns | - |
Typical Turn On Delay Time | - | 9 ns | - |
Qg Gate Charge | - | 17.2 nC | - |
Channel Mode | - | Enhancement | - |