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IPD100N06S403ATMA1 vs IPD100N06S4-03(SP0010287 vs IPD100N06S4-03

 
PartNumberIPD100N06S403ATMA1IPD100N06S4-03(SP0010287IPD100N06S4-03
DescriptionMOSFET N-Ch 60V 100A DPAK-2 OptiMOS-T2IGBT Transistors MOSFET N-Ch 60V 100A DPAK-2 OptiMOS-T2
ManufacturerInfineon-infineon
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance2.8 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge128 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation150 W--
ConfigurationSingle--
Channel ModeEnhancement-Enhancement
PackagingReel-Reel
Height2.3 mm--
Length6.5 mm--
SeriesXPD100N06-OptiMOS-T2
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandInfineon Technologies--
Fall Time5 ns-5 ns
Product TypeMOSFET--
Rise Time70 ns-70 ns
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns-40 ns
Typical Turn On Delay Time30 ns-30 ns
Part # AliasesIPD100N06S4-03 IPD100N06S403XT SP000415576--
Unit Weight0.139332 oz-0.139332 oz
Part Aliases--IPD100N06S403ATMA1 IPD100N06S403ATMA2 IPD100N06S403XT SP001028766
Tradename--OptiMOS
Package Case--TO-252-3
Pd Power Dissipation--150 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--100 A
Vds Drain Source Breakdown Voltage--60 V
Vgs th Gate Source Threshold Voltage--4 V
Rds On Drain Source Resistance--3.5 Ohms
Qg Gate Charge--99 nC
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