IPB70N10S3-12 vs IPB70N10S3 vs IPB70N10S3-12 3N1012

 
PartNumberIPB70N10S3-12IPB70N10S3IPB70N10S3-12 3N1012
DescriptionMOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T
ManufacturerInfineonINF-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current70 A--
Rds On Drain Source Resistance9.4 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge66 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation125 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm--
Length10 mm--
SeriesOptiMOS-TOptiMOS-T-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon Technologies--
Fall Time8 ns8 ns-
Product TypeMOSFET--
Rise Time8 ns8 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns25 ns-
Typical Turn On Delay Time17 ns17 ns-
Part # AliasesIPB70N10S312ATMA1 IPB7N1S312XT SP000261246--
Unit Weight0.139332 oz0.139332 oz-
Part Aliases-IPB70N10S312ATMA1 IPB70N10S312XT SP000261246-
Package Case-TO-252-3-
Pd Power Dissipation-125 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-70 A-
Vds Drain Source Breakdown Voltage-100 V-
Rds On Drain Source Resistance-11.3 mOhms-
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