IPB083N10N3 G vs IPB083N10N3 vs IPB083N10N3G , 2SD1936T

 
PartNumberIPB083N10N3 GIPB083N10N3IPB083N10N3G , 2SD1936T
DescriptionMOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance7.2 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge55 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation125 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min45 S--
Fall Time8 ns8 ns-
Product TypeMOSFET--
Rise Time42 ns42 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time31 ns31 ns-
Typical Turn On Delay Time18 ns18 ns-
Part # AliasesIPB083N10N3GATMA1 IPB83N1N3GXT SP000458812--
Unit Weight0.068654 oz0.068654 oz-
Part Aliases-IPB083N10N3GATMA1 IPB083N10N3GXT SP000458812-
Package Case-TO-263-3-
Pd Power Dissipation-125 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-80 A-
Vds Drain Source Breakdown Voltage-100 V-
Rds On Drain Source Resistance-8.2 mOhms-
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