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| PartNumber | IPB011N04N G | IPB011N04NGATMA1 | IPB011N04NGATMA1 , 2SD18 |
| Description | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3 | MOSFET MV POWER MOS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-7 | TO-263-7 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 180 A | - | - |
| Rds On Drain Source Resistance | 1.1 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 63 ns | - | - |
| Typical Turn On Delay Time | 40 ns | - | - |
| Part # Aliases | IPB011N04NGATMA1 IPB11N4NGXT SP000388298 | G IPB011N04N IPB11N4NGXT SP000388298 | - |
| Unit Weight | 0.056438 oz | - | - |